STX13003 high voltage fast-switching npn power transistor n st13003 silicon in to-92 package n medium voltage capability n low spread of dynamic parameters n minimum lot-to-lot spread for reliable operation n very high switching speed applications: n electronic ballasts for fluorescent lighting description the device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. it uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide rbsoa. the STX13003 is designed for use in compact fluorescent lamp application. ? internal schematic diagram april 2003 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 700 v v ceo collector-emitter voltage (i b = 0) 400 v v ebo emitter-base voltage (i c = 0, i b = 0.5 a, t p < 10 m s, t j < 150 o c) v (br)ebo v i c collector current 1 a i cm collector peak current (t p < 5 ms) 3 a i b base current 0.5 a i bm base peak current (t p < 5 ms) 1.5 a p tot total dissipation at t c = 25 o c 1.5 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c to-92 1/7
thermal data r thj-case thermal resistance junction-case max 83.3 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cev collector cut-off current (v be = -1.5v) v ce = 700v v ce = 700v t j = 125 o c 1 5 ma ma v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 10 ma 9 18 v v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 10 ma l = 25 mh 400 v v ce(sat) * collector-emitter saturation voltage i c = 0.5 a i b = 0.1 a i c = 1 a i b = 0.25 a i c = 1.5 a i b = 0.5 a 0.5 1 3 v v v v be(sat) * base-emitter saturation voltage i c = 0.5 a i b = 0.1 a i c = 1 a i b = 0.25 a 1 1.2 v v h fe * dc current gain i c = 0.5 a v ce = 2 v i c = 1 a v ce = 2 v 8 5 35 25 t r t s t f resistive load rise time storage time fall time i c = 1 a v cc = 125 v i b1 = 0.2 a i b2 = -0.2 a t p = 25 m s 1 4 0.7 m s m s m s t s inductive load storage time i c = 1 a i b1 = 0.2 a v be = -5 v l = 50 mh v clamp = 300 v 0.8 m s * pulsed: pulse duration = 300 m s, duty cycle = 1.5 %. safe operating area output characteristics STX13003 2/7
reverse biased soa dc current gain collector emitter saturation voltage derating curve dc current gain base emitter saturation voltage STX13003 3/7
inductive load fall time inductive load storage time STX13003 4/7
figure 1: inductive load switching test circuits. figure 2: resistive load switching test circuits. 1) fast electronic switch 2) non-inductive resistor 3) fast recovery rectifier 1) fast electronic switch 2) non-inductive resistor STX13003 5/7
dim. mm inch min. typ. max. min. typ. max. a 4.32 4.95 0.170 0.195 b 0.36 0.51 0.014 0.020 d 4.45 4.95 0.175 0.194 e 3.30 3.94 0.130 0.155 e 2.41 2.67 0.095 0.105 e1 1.14 1.40 0.045 0.055 l 12.70 15.49 0.500 0.609 r 2.16 2.41 0.085 0.094 s1 1.14 1.52 0.045 0.059 w 0.41 0.56 0.016 0.022 v 4 degree 6 degree 4 degree 6 degree to-92 mechanical data STX13003 6/7
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